Depth Dependence of {311} Defect Dissolution

A deep band of {311} defects was created 520nm below the silicon surface with a 350 keV Si implant followed by a cluster forming rapid thermal anneal (800C, 1000s). Chemcial etching was used to vary the depth to the surface of the {311} defect band. Afterwards, the defect dissolution was investigated at 750C for different times. 

Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The {311}-defects were analyzed by plan-view, transmission-electron microscopy. We show that the dissolution time of the {311}-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and consistent with analogous observation of the depth dependence of transient enhanced diffusion.