Design and Fabrication of Organic Complementary Circuits

We have used a simple model description of single field effect transistor characteristics to design organic complementary circuits ranging in complexity from simple inverters through 48-stage shift registers and 3-bit row decoders. The circuits were fabricated using standard silicon photolithographic techniques to define the metal, insulator, and interconnect levels. Ohmic source and drain contacts were formed by coating the uppermost level with first nickel then gold. The n-type and p-type organic semiconductors were evaporated onto these substrates to complete the circuits. Measured circuit characteristics were in reasonable agreement with simulations based on the simple device model.