Determination of Atomic Structure at the Epitaxial CaF sub 2/Si(111) Interface
30 November 1987
Epitaxial films of CaF sub 2 have been grown on Si(111) by molecular beam epitaxy under UHV conditions. The crystallinity of such films is dramatically improved after a rapid thermal anneal (RTA). Determination of the interfacial atomic structure has been performed using high resolution electron microscopy (HREM).