Determination of the (100) InAs/GaSb Heterojunction Valence- Band Discontinuity by X-ray Photoemission Core Level Spectroscopy
01 January 1987
The valence-band discontinuity has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20A of InAs on GaSb we find that Ev = 0.53 eV.