Device Characterization of a 1.0um CMOS Technology for Logic and Custom VLSI Application

12 May 1986

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A twin-tub 1 um CMOS technology has been developed for logic and custom IC applications. The technology utilizes LDD n-channel and buried p-channel devices with TaSi2/n+ polysilicon gate. This paper will describe the device design and characterization that allow high frequency, high temperature operation in digital custom circuits.