Dielectric characterization of ferroelectric thin films deposited on silicon

This paper describes some experimental results concerning the dielectric characterizations of PZT, PT and BT ferroelectric thin films deposited on silicon. Firstly, the ferroelectric properties of these films are checked, notably the high dielectric constant values. Secondly, assuming a simple electrical model, we derive from impedance measurements the conductivity of the platinum deposited as a bottom electrode. (C) 1999 Elsevier Science Ltd. All rights reserved.