Diffusion and precipitation in amorphous Si.
01 January 1985
The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300- 600C. Typical slow diffusers in crystalline Si, such as As, In, Sb and Bi, show little or no diffusion at low concentrations. At high concentrations (> 1 at.%), they diffuse rapidly with D >~ 10(-15)cm(2)/sec in the temperature range 500-600C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si and D > 10(-12)cm(2)/sec at 400-600 C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si.