Diffusion in InP using evaporated Zn sub 3 P sub 2 film with transient annealing.

A new diffusion technique using Zn sub 3 P sub 2 layer as the diffusion source with rapid thermal annealing is evaluated, and a number of interesting features are discussed. A p sup + layer can only be achieved at temperatures ranging between 500C and 550C with a 15 second minimum diffusion time. Diffusivity is calculated and it is comparable with that of furnace diffusion. However, in order to form a shallow layer, there should not be any high temperature treatment or any other cause for the redistribution of Fe or dopant. Annealing at 850C for 15 seconds prior to diffusion moves the carrier profile from 3000angstroms to 6000angstroms deep, and the second diffusion front extends to 2.4micron for the semi-insulating InP substrate.