Diffusion of implanted impurities in amorphous Si.

The diffusion coefficients of Cu, Ag, and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150-600C are characterized by Arrhenius relationships with activation energies for Cu, Ag, and Au of 1.25, 1.6 and 1.4 eV respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding substitutional diffusion coefficients in crystalline Si.