Direct Write E-Beam Lithography

Electron beam lithigraphy established its nich in microelectronics as a mask-making tool in the early 1970's. However, as the need grew to write sub-half micron patterns with higher functional density, greater accuracy, and improved pattern quality, the role of e-beam lithography for direct write of integrated circuits (IC) was defined. E-beam lithography has the advantage of achieving high resolution and extremely tight overlay accuracy, but it is equally well known for its low throughput, substrate charging, and proximity effect, the unwanted exposure of the resist due to electron scattering. This talk will address both the advantages and limitations of direct write e-beam lithography from the view of a process engineer.