Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures.

We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsequent annealing. The implants were performed at 77K, room temperature, and 210C. The greatest enhancement occurs, after annealing, for Si implants performed at 77K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.