Disordering of In sub 0.53 Ga sub 0.47 As-InP Quantum Wells by Si Implantation.

Selective disordering of In sub 0.53 Ga sub 0.47 As-InP multiple quantum well structures by Si implantation is demonstrated for the first time by transmission electron microscopy techniques. As grown, annealed, and Si implanted and annealed samples were also studied through optical adsorption and photoluminescence measurements, where a shift of the photoluminescence and absorption edge to higher energy was observed in implanted and annealed samples with respect to annealed only samples. This shift is attributed to a combination of disordering and Burstein- Moss effect.