Distributed Amplifiers in InP DHBT for 100-Gbit/s Operation
23 May 2010
Two single-ended distributed amplifiers were designed and fabricated using a 0.7-µm InP double heterojunction bipolar transistor (DHBT) technology. The first amplifier's gain and bandwidth are respectively around 15 dB and 90 GHz. The second amplifier's gain and bandwidth are respectively higher than 13 dB and 110 GHz. Eye diagram measurements were performed at 86 Gbit/s showing clear eye opening and large output swing, respectively as high as 2.7 Vpp and 2.4 Vpp, for the first and second amplifier. These distributed amplifiers are well suited for a use as modulator drivers for 100 Gbit/s optical communication systems. Index Terms -- Distributed amplifiers, driver circuits, heterojunction bipolar transistors, indium compounds.
