Distribution of point defects in orientation-patterned GaAs crystals: A cathodoluminescence study

Toward efficient generation of tunable IR signals by quasi-phase-matched nonlinear optical frequency conversion, orientation-patterned GaAs crystals (OP-GaAs) were grown by hydride vapor phase epitaxy on lithographically prepared templates. The cathodoluminescence technique was used to study these epitaxial thick films, consisting of periodic domains of inverted crystallographic orientation, (001)/(00-1). The distribution of the main defects incorporated during growth is presented. One demonstrates that point defects, such as V(Ga) complexes, can contribute to the optical losses of thick OP-GaAs crystals. (C) 2008 American Institute of Physics. {[}DOI: 10.1063/1.2999586]