Dopant Dose Loss at the Si-SiO sub 2 Interface

The phenomenon of dopant dose loss through trapping at the Si-SiO sub 2 interface has important consequences for MOS device fabrication. It represents also a challenge to analytical techniques, since the trapped dopants appear to exist in one or a few monolayer thickness at the interface. In this work, we report on a complementary approach, using both electrical device data and accurate process modeling, as well as analytical dopant profiling with SIMS, to investigate features of the phenomenon, such as dose dependence, de-trapping, and TED effects. This approach enabled the development of dose loss models suitable for design of current and future CMOS technologies.