Doping of GaAs and Al(0.35)Ga(0.65)As grown by metal organic chemical vapor deposition with Zn or Se.
01 January 1984
The doping of Zn (p-type) in GaAs and Al(0.35)Ga(-.65)As and that of Se (n-type in Al(0.35)Ga(0.65)As grown by the metal organic chemical vapor deposition method is studied. Calibration curves between the carrier concentration and the half-width of the room temperature emission band are obtained in order to be able to use them for quick estimates of the conductivity in the ternary cladding layers of the double hetero-laser structures.