Doping of InP and GaInAs with S During Metalorganic Vapor Phase Epitaxy.
01 January 1989
The doping characteristics of S in the metalorganic vapor phase epitaxial growth of InP and GaInAs are studied using 3 different but consistent methods of determining the doping level in the crystal, Hall effect, electrochemical CV profiling and by CV profiling in lightly doped samples where the space charge can be moved in reverse bias over distances of ~0.5micron.