Dynamical x-ray diffraction simulations for asymmetric reflections for III-V semiconductor multilayers.
01 January 1988
A new computer code that calculates reflectivities from BRAGG planes that are not parallel to the crystal surface has been applied to multilayer structures. Results for thin layers of the quaternary alloy InGaAsP on a [100] oriented InP substrate are presented as well as results for InP/InGaAsP/InP double heterostructures (DH's). We have investigated (511), (444), (422), and (311) reflections. We find that high sensitivity to thin [100] epitaxial layers is obtained with the (311) reflection for which the incident beam angle is only 0.8degrees above the surface for Cuk alpha sub 2, radiation and we find that for DH's the interpretation of Pendellosung fringes is simplest when the thickness of the entire epitaxial structure is much less than the extinction depth.