Effect of Crystal Stoichiometry on Activation Efficiency in Si Implanted, Rapid Thermal Annealed GaAs
01 January 1986
A dramatic dependence on crystal stoichiometry has been observed for the donor activation of low doses of Si ions implanted into undoped semi-insulating GaAs. Samples from Liquid Encapsulated Czochralski crystals grown from melts containing As concentrations varying from 47 1/2 - 65 atom % were implanted with 100 keV 29Si ions at a dose of 5x1012 cm sup -2.