Effect of H(2) annealing on the inversion layer mobility.
01 January 1984
In this memo we present some results on the inversion layer mobility for our NMOS devices. Our devices do not follow the universal mobility curve reported by Clemens and Sabnis. Annealing in H(2) at 700C results in an improvement of mobility for low as well as high electric field regions. Even after 700C annealing our devices do not follow the universal mobility curve. It seems that the inversion layer mobility as a function of the vertical effective electric field in the channel depends on the technology used for fabrication of MOSFETs.