Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 mu m
11 December 2006
The authors report the growth of 6-, 9-, and 12-layer InAs/InP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm(-1) is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p-type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 W/A per facet) and output power (P-out=20 mW), close to those of conventional quantum well devices. (c) 2006 American Institute of Physics.