Effects of annealing on plasma deposited a-Si:H films grown under optimal conditions.
01 January 1984
A comprehensive study is presented of the effects of isochronal annealing on the optical properties, spin density and hydrogen evolution of plasma deposited a-Si:H films grown under optimal conditions. Purely monotonic behavior is observed in all the properties of these films for annealing temperatures from 300C to 600C. Changes in the optical gap parallel the hydrogen content of the films, and can be described by a simple alloy model. The luminescence quenching, on the other hand, more closely reflects the spin density.