Effects of Methylarsine Homologs (CH sub 3) sub n AsH sub 3- n on the Metalorganic.
01 January 1989
The methylarsine molecular homologs (CH sub 3) sun n AsH sub 3-n (n=1-3), have been investigated as alternatives to arsine in the metalorganic vapor phase epitaxy (MOVPE) of GaAs to determine the effects of the degree of hydrogen atom substitution of film growth characteristics. A direct comparison of both the thermal decomposition and growth properties of the alkylarsine reactants with arsine was performed in the same reactor under identical experimental conditions for a wide range of growth parameters.