Effects of Methylarsine Homologues (CH sub 3) sub n AsH sub 3-n on the OMVPE Growth Characteristics of GaAs

Although metalorganic vapor phase epitaxy (MOVPE) is an important technique for the deposition of semiconductor thin films with a wide range of composition and doping profiles, little information exists on the details of the underlying chemistry controlling the process. We have used sup 13 C isotopic labeling experiments to obtain direct evidence on how the alkyl reactants used in MOVPE affect the growth and impurity incorporation reactions.