Effects of Patterning and Thermal Annealing on the Crystalline Quality of GaAs Grown on Si by MBE

Patterned or selective growth of GaAs on Si is essential for monolithic integration of GaAs and Si devices on the same Si substrate, and its applications are being exploited for reducing the wafer warpage, the tensile stress and the lateral termination of defects. Several approaches to patterned growth have been used.