Effects of thermal annealing on semi-insulating undoped GaAs grown by the liquid-encapsulated Czochralski Technique.
01 January 1985
Recently a number of studies have reported a correlation between variations threshold voltage of field effect transistors and the nonuniformity of the luminescence efficiency of semi-insulating GaAs crystals grown by the liquid- encapsulated Czochralski technique. The changes in luminescence efficiency and subsequently the variations in threshold voltages were dramatically reduced by post-growth annealing of the GaAs crystals under a variety of conditions. In this study, we employ the technique of spatially resolved cathodoluminescence (CL) to carefully examine the changes in luminescence efficiency due to post-growth annealing.