Effects of Two Dimensional Confinement on the Optical Properties of InGaAs/InP Quantum Wire Structures.

We describe fabrication and photoluminescence excitation of InGaAs/InP quantum wires with a lateral dimension of ~ 350angstroms. Transverse confinement results in the splitting of the n=1 heavy hole-electron transition. Three of these levels are observed in the excitation spectrum. The exciton energies agree with the theoretical predictions based on a new method of solving the two dimensional effective mass Schrodinger equation.