Electrical and Structural Properties of Si/Silicide/Si Heterostructures Fabricated Using Ion Implantation

Using high dose implantation of transition metals into Si followed by annealing (mesotaxy), we have fabricated buried, single crystal layers of CoSi sub 2, NiSi sub 2, and Cr Si sub 2 in Si. A combination of TEM and Rutherford Backscattering and channeling analysis shows that the layers have sharp interfaces and X sub (min)'s of 10%. The CoSi sub 2 and NiSi sub 2 layers are metallic with residual resistivities that are a factor of two lower than comparable UHV-grown material.