Electrical Characteristics of InAsSb/GaSb Heterojunctions.
01 January 1986
Heterojunctions of n-type InAs(0.95)Sb(0.05) grown by OMCVD on n-type GaSb substrates were studied by C-V and I-V measurements. The n-n heterojunctions are strongly rectifying and behave like metal-(n) GaSb Schottky diodes with a barrier height of 0.80 +-0.02 eV. These measurements establish that the band lineup in this system is of the broken gap variety. We measure the valence band offset, Ev(GaSb)-Ev (InAs(0.95)Sb(0.05)), to be 0.67 +- 0.04 eV.