Electrical characterization of Fe-doped semi-insulating InP grown by metalorganic chemical vapor deposition.
01 January 1984
The bulk resistivity of Fe-doped MOCVD grown epitaxial InP was determined from current-voltage and capacitance measurements made on Schottky-diode-like devices. The current-voltage data exhibit both an ohmic and a space charge limited regime, and the capacitance was found to be independent of applied bias. The electrical thickness was obtained from the capacitance using a relationship appropriate for current injection.