Electrical Transport in Si-/CrSi sub 2 /Si Heterostructure Fabricated Using Ion Implantation

We have created continuous buried layers ofCrSi sub 2 in silicon using high dose implantation of Cr sup + into (111)-oriented silicon followed by annealing (mesotaxy sup 1). Rutherford Backscattering and channeling analysis shows that the layers are stoichiometric and aligned with the substrate. This has been confirmed by TEM studies which also reveal that the layers have atomically-abrupt interfaces and consist of large grains oriented primarily with their (111)-axis perpendicular to the silicon surface.