Electrical Transport in Si/CoSi sub 2 /Si Heterostructures Grown by Implantation

We have used mesotaxy, a technique which involves high dose implantation followed by high temperature annealing, to create thin (500A) layers of oriented single-crystal CoSi sub 2 buried beneath the surface of (100) silicon wafers. Several thousand angstroms of epitaxial silicon are then deposited using an RTCVD process. This results in a Si/CoSi sub 2 /Si heterostrutures which is difficult to grow by UHV deposition and reaction. Rutherford backscattering and channeling measurements in conjunction with TEM observation indicate that the Si overlayer has threading dislocations at a density of ~10 sup 8 /cm sup 2.