Electrically active defects in solid phase epitaxial silicon.

Charge collection mode (CCM) and secondary electron (SE) emission have been used in the SEM to image defects in amorphized solid phase regrown silicon. CCM images were recorded as a function of incident beam energy, Schottky diode bias, and sample temperature. 

Recombination and generation centers were observed that are associated with clusters of dislocation loops and threading hairpin dislocations. Anomalous CCM contrast reversals as a function of incident beam energy were also observed. The SEM experimental results were correlated with TEM, secondary ion mass spectroscopy (SIMS), and Rutherford backscattering (RBS).