Electroabsorption in InGaAsP-InP double heterostructures.
01 January 1984
This letter reports the measurements of electroabsorption in InGaAsP-InP double heterostructures for electric fields in the range of 10-300kV/cm. The absorption of the waveguide modes is very large (~40-(1)cm) at -5V applied bias for photon energies ~100meV from the band gap.