Electron irradiation effects on A1-Free laser diodes emitting at 852 nm

852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with I-MeV electrons at fluences ranging from 10(14) up to 10(16) e (-)/cm(2). Layers corresponding to the laser diodes materials were characterised using photoluminescence and time resolved photoluminescence. Laser diodes L-I-V characteristics were measured in pulsed and continuous regime.