Electron mobility study of the influence of disorder on superconductivity.

The variation of electrical conductivity, field-effect mobility, Hall coefficient, and superconducting T(c) with disorder parameter k(F)1 (product of Fermi wavevector and elastic mean free path) is examined in amorphous InO(x), a novel material where k(F)1 progressively increases with thermal annealing. The conductivity and T(c) extrapolate to zero at critical disorder k(F)1 = square root of 3, as predicted by localization scaling in the presence of small interaction effects at the metal-insulator transition.