Electron quantum interference and 1/f noise in bismuth.

The 1/f resistance noise of thin Bi films of lateral dimensions 1-10microns increases at low temperature approximately as T sup (-1), and the noise at 1 K is larger than at room temperature. The noise magnitude is reduced by a factor of 2 above a temperature- dependent characteristic magnetic field. These phenomena demonstrate that below liquid nitrogen temperature the 1/f noise in a weakly- disordered metal arises from defect-mediated quantum interference of conduction electrons.