Electron transport dynamics in quantized intrinsic GaAs.
01 January 1987
Information on the self-energy of quantized current carrying electron states in intrinsic GaAs has been obtained. The lifetime of GAMMA-electron states in double barrier resonant tunnel structures depends on the well width, longitudinal optical phonon scattering and transfer into the subsidiary X- and L- minima. Application of a magnetic field parallel to the direction of current injection totally quantizes the electronic system and enhances the lifetime of low energy electron states.