Electron Transport in AlSb/InAs/GaSb Tunneling Hot Electron Transistor

There is interest in using III-V hot electron transistor (HET) devices for potential high speed applications. In the AlGaAs/GaAs HET, severe hot electron scattering occurs in the heavily doped GaAs base. To improve the performance of HETs, alternative In-containing alloys with superior transport properties become attractive. Using a pseudomorphic InGaAs base (In=0.12) the current gain at 77K can be improved [1], and high frequency operation at 77K of a resonant tunneling HET has been reported using a GaInAs/AlInAs pseudomorphic heterostructures [2]. Ultimately HET structures employing pure InAs may maximize the material advantage, and there is a need to explore transport properties of such device structures.