Electronic excitations on semiconductor (100) surfaces.
01 January 1984
High-resolution electron-energy loss spectroscopy (HREELS) was used to study electronic excitations on clean Si (100) (2 x 1) and Ge(x)Si(1-x) (100) surfaces. On the Si samples bulk valence-band to bulk conduction-band transitions were observed along with occupied surface-state to bulk conduction- band and bulk valence-band to unoccupied surface-state transitions. Thresholds for these transitions were 1.1, 1.4 and 0.3 eV respectively.