Electrothermal and large-signal modeling of switchmode AlGaN/GaN HEMTs

We report in this paper on the improvement of the model presented in [1] for AlGaN/GaN HEMT especially focused on switch applications. We developed a new method to measure accurately the ON resistance Ron versus the junction temperature, and will compare here our thermal model to the measurements realized in pulsed I(V) and in [S]-parameters. We also focused on the influence of drain and gate impedances and biases for large signal switch applications, and performed extensive measurements and simulations comparisons to demonstrate the good accuracy of the proposed electrothermal model.