Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy.
01 January 1984
We report the first epitaxial semiconductor-insulator-semiconductor (SIS) double heterostructures using III-V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1-xF2/InP (001), were grown by molecular-beam epitaxy and have lattice- mismatches of -6.9% and +2.0%, respectively. SIS structures have potential applications as electronic and photonic devices, especially in monolithic integrated optics, since they offer possibilities of device isolation, waveguiding, and three-dimensional integrated circuits.