GaInAsP/InP Double-Heterostructure Lasers Emitting at 1.5microns and Grown by Chemical Beam Epitaxy

Double heterostructure lasers of Ga sub (x) In sub (1-x) As sub (1-y) Py lattice matched to InP and emitting at 1.55micron have been grown by chemical beam epitaxy (CBE). Broad area lasers fabricated from theses wafers had pulsed room temperature threshold current densities , J sub (th), and differential quantum efficiencies that are similar to those best results obtained from wafers grown by liquid phase epitaxy and metalorganic chemical vapor deposition. The lowest J sub (th) obtained was 1 kA/cm sup 2 with an active layer thickness of 0.14micron. Differential quantum efficiencies were ~15-18% per facet. Lasing was obtained with these broad-area lasers up to 106C with relatively weak degradation of quantum efficiency. Excellent device uniformity and wafer-to-wafer reproduciability were obtained with CBE. The method appears at this yet early stage to be an attractive approach to GaInAsP epitaxy.