Growth and Electronic Transport in 9,10-Diphenylanthracene Single Crystals - a High Mobility Ambipolar Organic Semiconductor

We have grown bulk crystals of DPA and demonstrated by the TOF technique that these ultra-pure single crystals exhibit both electron and hole transport. The high charge carrier mobilities at RT for electrons (~13 cm2/Vs) and holes (~3.7 cm2/Vs) make this material a prominent candidate for ambipolar device applications if one overcomes the barrier for charge carrier injection into this organic semiconductor. The mobility behavior of holes follows a band-like transport in the high temperature regime (200 K - 400 K). Assuming a pure band-like conduction also in the low temperature regime, the saturation of the mobility below 100 K yields a valence bandwidth of the order of 2 meV which demands for a more sophisticated approach to describe the electronic behavior of DPA.