Heavily-Doped n-type InP and InGaAs Grown by Metalorganic Chemical Vapor Deposition Using Tetraethyltin

High-performance device structures in the InP-InGaAs materials system, such as injection lasers and heterojunction bipolar transistors, commonly require that highly doped, high conductivity layers of InP and InGaAs be grown for the purpose of providing low-resistance ohmic contacts to the device. In the growth of such device structures by metalorganic chemical vapor deposition (MOCVDD) the n-type doping of InP and InGaAs layers is usually accomplished by the use of S from the pyrolysis of H sub 2 S or Se from H sub 2 Se.