Heavily-doped n-type InP and InGaAs Grown by Metalorganic Chemical Vapor Deposition Using Tetraethyltin.

Heavily doped n-type InP and InGaAs epitaxial layers have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn-doped InP and InGaAs layers have been grown with doping levels as high as n sub (300K~) 3.3x10 sup (19) cm- and n sub (300K~) 6.1x10 sup 19 cm sup (-3), respectively. Hall measurements of N sub d -N sub a at 300K and 77K indicate that the Sn is uncompensated up to these levels. Analysis of the Sn concentration in InP:Sn and InGaAs:Sn layers using Secondary Ion Mass Spectrometry (SIMS) shows that all of the Sn is ionized in InP and InGaAs until a limit is reached corresponding to the electrical limits.