High Frequency Buried Heterostructure 1.5micron InGaAsP/InP Lasers Grown Entirely by Metalorganic Vapor Phase Epitaxy in Two Epitaxial Growth Steps.

A new high frequency buried heterostructure laser is described and fabricated using two epitaxial growth steps, grown entirely by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE). The lasers are made with non-re-entrant mesas with the active layer narrowed to 1-2micron by a selective etch to insure operation in the lowest order transverse mode. The regrowth with Fe doped semi-insulating InP fills in the etched slots adjacent to the active layer and planarizes the structure. The non-re-entrant mesa eliminates the anomalous rapid growth in MOVPE at the edges of re-entrant mesas. The lasers have thresholds of 20 mA and quantum efficiencies of 46% with good linearity up to 10 mW. The laser shows a small signal microwave bandwidth of 5.8 GHz at 5 mW.