In sub (0.5) (Al sub x Ga sub (1-x)) sub (0.5) P HEMT's for High-Efficiency Low-Voltage Power Amplifiers: Design, Fabrication and Device Results

01 August 1999

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In sub (0.5) (Al sub x Ga sub (1-x) sub (0.5) P HEMT's are expected to have higher two-dimensional electron gas density and larger current drive capability than both Al sub (0.23) Ga sub (0.77) As and In sub (0.5) Ga sub (0.5) P HEMT's due to the improved conduction band offsets. In this work, we performed a systematic investigation of the electrical properties of In sub (0.5) (Al sub x Ga sub (1-x) sub (0.5) P (