InGaAs/InP Multiquantum Well PIN Structure Grown by Trichloride Vapor Phase Epitaxy

The chemistry of trichloride vapor phase epitaxy lends itself to the growth of ultra-high purity InGaAsP heterostructures. Limitations on the growth of complex device structures are imposed by reactor design as well as reaction chemistry. In this study, we report on the highly uniform epitaxial growth of InGaAs/InP multiquantum well (MQW) structures in a multi-frit trichloride vapor phase epitaxial (MFVPE) reactor whose design is similar to the vapor levitation epitaxy reactor. This multi-frit reactor offers the possibility of un-interrupted growth of heterostructures with high purity InP (N sub D -N sub A ~ 10 sup (14) cm sup (-3)) and InGaAs (N sub d - N sub A ~ 2X10 sup (14) cm sup (-3)). The growth of InGaAs/InP MQW structures with various well thicknesses was investigated, as was the effect of substrate orientation. The MQW structure have been characterized by IR absorption, photoluminescence, cross-sectional TEM and double crystal x-ray diffraction.