InP DHBT characterization up to 500 GHz and compact model validation towards THz circuit design

We report on-wafer characterization results up to 500 GHz on a 0.4×5 µm² InP/InGaAs DHBT. The measurements were performed using an on-wafer Thru-Reflect-Line (TRL) calibration kit especially developed in this technology. The resulting measurements allowed to validate both the RF performance of the 0.4-µm InP/InGaAs DHBT fabricated by III-V Lab, featuring 390/600 GHz fT/fmax, and the HiCuM compact model towards future circuit design at submillimeter-wave frequencies thanks to 90% typical yield.